Chemically amplified deep UV(CA-DUV) resists are typically based on a combination of an acid labile polymer and a photoacid generator(PAG) but acid amplification type photoresist is formulated by addition of the acid amplifiers to chemically amplified resist system(CAPs). We developed acid amplifiers base on cyclohexanediol such as 1-methacryloyloxy-4-tosyloxy cyclohexane(MTC) and poly(MTC$_{10}$-co-tBMA$_{90}$)(P-1) to enhance photosensitivity. P-1 is a copolymer of tert-butyl methacrylate and MTC as a positive working photoresist based on polymeric acid amplifier in order to enhance photosensitivity and simplify the process of fomulating a photoresist. P-1 exhibited 2X higher photosensitivity compared with PtBMA. The acid amplifiers showed reasonable thermal stability for resist processing temperature and higher photosensitivity compared with chemically amplified resist.