Single phase CuInS$_2$ thin film with the strongest diffraction peak (112) at diffraction angle (2$ heta$) of 27.7$^{circ}$ and the second strongest diffraction peak (220) at diffraction angle (2$ heta$) of 46.25$^{circ}$was well made with chalcopyrite structure at substrate temperature of 70$^{circ}C$. annealing temperature of 250$^{circ}C$, annealing time of 60 min. The CuInS$_2$ thin film had the greatest grain size of 1.2 Um when the Cu/In composition ratio of 1.03, where the lattice constant of a and c were 5.60${AA}$ and 11.12${AA}$, respectively. The Cu/In stoichiometry of the single-phase CuInS$_2$thin films was from 0.84 to 1.3. The film was p-type when tile Cu/In ratio was above 0.99 and was n-type when the Cu/In was below 0.95. The fundamental absorption wavelength, absorption coefficient and optical band gap of p-type CuInS$_2$ thin film with Cu/In=1.3 were 837nm, 3.OH 104 cm-1 and 1.48 eV, respectively. The fundamental absorption wavelength absorption coefficient and optical energy band gap of n-type CuInS$_2$ thin film with Cu/In=0.84 were 821 nm, 6.0${ imes}$10$^4$cm$^$-1/ and 1.51 eV, respectively.