In this paper, we developed a new thick photoresist fabrication technology for 3-dimensional microstructures. In general, like as AZ photoresist was coated with thin film thickness about 1 $mu extrm{m}$ to 30 $mu extrm{m}$, but photoresist like SU-8 has thickness of several tens $mu extrm{m}$ or more and high aspect ratio. When we fabricate a microstructure using the thick photoresist like SU-8, cracks on the SU-8 thick photoresist are appeared by stress which was caused by sudden cooling down during bake of the thick photoresist spun on wafer. Thus, it was hard to fabricate the microstructure using the thick photoresist for electroplating. In this paper, we developed a new process to produce a 3-dimensional microstructure without the crack by stress through a suitable thick photoresist coating, time control of cool down and time control of PEB (Post Expose Bake).