There are now many theoretical investigations and real manufactures for numerous applications of photonic crystals (PCs) associated with photonic band gap and photonic integrated circuits. However, there are some difficulties to design and fabricate the desired pattern quality. It is not easy to satisfy accurate critical dimension (CD) for patterns with arbitrary shapes and pitch sizes aligned in various directions. In this work, we report the optimum conditions to better fabricate and design, and greatly improve pattern quality in delineating two-dimensional (2D) PCs in the nanometer range using single- step e-beam lithography system with conventional exposure mode.