6H-SiC MOSFETs and digital ICs have been fabricated and characterized. PMOS devices are fabricated on an n-type epilayer while the NMOS devices are fabricated on implanted p-wells. NMOS and PMOS devices use a thermally grown gate oxide. SiC MOSFETs are fabricated using different impurity activation methods such as high temperature and newly proposed laser annealing methods. Several digital circuits, such as resistive road NMOS inverters, CMOS inverters, resistive road NMOS NANDs and NORs are fabricated and characterized.