ZnO thin films on (100) p-type silicon substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YAG laser with a wavelength of 266nm. The influence of the deposition parameters, such as oxygen pressure, substrate temperature and laser energy density variation on the properties of the grown film, was studied. The experiments were performed for oxygen gas flow rate of 100~700 sccm and substrate temperatures in the range of 200~$500^{circ}C$. We investigated the structural and morphological properties of ZnO thin films using X-ray diffraction(XRD), scanning electron microscopy(SEM) and atomic force microscopy(AFM).