The photovoltaic industry has been forced to lower the production cost in many ways. Ingot preparation technology is growing rapidly toward large-scale production. Multicrystalline silicon ingot of 69 cm square cross section, 240kg has been produced with fully automated equipment. During solidification, heat has been extracted from the bottom of the crucible through the graphite pedestal moving downward. The characteristics of the large ingot grown in this method are found to be uniform structurally and electrically.