An overview of our recent work on thin films of metal oxides deposited on silicon by a novel excimer lamp-assisted ultraviolet injection liquid source CVD (UVILS-CVD) process for advanced high-k gate dielectrics applications will be presented. Recent results on TiO$_2$, Ta$_2$O$_{5}$, ZrO$_2$, HfO$_2$ and TiO$_2$-doped Ta$_2$O$_{5}$ will be demonstrated. The physical. structural, interfacial properties and electrical characterization of the as-deposited and UV-annealed new high dielectric constant(high-k) materials, determined using ellipsometry, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, UV spectrophotometry, SEM, TEM, and C-V, I-V measurements, showed that good quality layers could bi produced. The investigation of high-k dielectrics grown by the UNILS-CVD process clearly demonstrates that low cost, high power density excimer lamp systems can provide an interesting alternative to conventional UV lamps and exciemr lasers for industrial large-scale low temperature materials processing. UVILS-CVD is a promising technoque for the controlled deposition of ultra thin high-k metal-oxide dielectrics for deep sup-micron CMOS devices at temperatures al low as 35$0^{circ}C$TEX>