Ti films were deposited onto 100${ imes}$100 mm alumina substrates using dc magnetron sputtering under the following conditions; substrate temperature of R.T～400 $^{circ}C$, annealing temperature of 100～400 $^{circ}C$, and sputtering gas pressure of 4${ imes}$10$^{-3}$ Torr～4${ imes}$10$^{-2}$ Torr. And the films were examined by X-ray diffraction analysis (XRD), scanning electron microscopy(SEM) and 4-point measurement system. The best electrical and structural properties was obtained by substrate temperature of ～200 $^{circ}C$, target-substrate distance of ～14 cm and sputtering pressure of ～1${ imes}$10$^{-2}$ Torr. Also at that condition the most excellent adhesion was observed.