The new textured surface epitaxial base(TSEB) cell as a high efficiency Si solar cell was fabricated and its eletro-optical characteristics were investigated. The fabricated device showed the open circuit voltage of 0.62 V, the short circuit current of 40 mA, the fill factor of 0.7, and the efficiency of 16% under the incident light of AM-1 100 mW/$cm^2$. The TSEB cell proposed in this paper has the structural superiority in the fabrication of high efficiency solar cell due to the carrier drift transport in the optical absorption region and the formation of back surface field by $P^-/P^+$ epitaxial base, and the low emitter series resistance by insertion of $n^+$ buried contact.