본 연구는 Cu/Ta/Si 기판 위에 전해 도금법으로 성장시킨 구리 박막을 성장 시켰다. 성장 속도는 음극 전류 밀도에 비례하고, 용액의 유량에 반비례하였다. 성장된 구리 박막의 저항률은 약 2.1 μΩ㎝ 이었고, Int(111)/Int(200), 비는 5.4였으며, 박막내에 불순물은 발견되지 않았다. 성막후에 10-3 torr 진공 중에서 온도를 변화해 가면서 열처리를 수행하였다. 열처리후에 저항률은 17 %, 결정성은 40 ％의 향상을 보였으며 170℃ 까지는 박막의 스트레스는 변화가 없었다.
Copper thin films were deposited on a Cu/Ta/Si substrate using the electroplating technique. Deposition rate was about 200 nm/min in proportion to current density and in inverse proportion to flow rate. Resistivity of copper thin film was approximately 2.1 ${mu}$Ωcm and Int$sub$(111)//Int$sub$(200)/ ratio of copper film was 5.4 and no significant impurities were detected. After the deposition, electroplating copper films were annealed at various temperatures in a background pressure of 10$^$-3/ torr. The resistivity of copper thin films were improved by ∼17 % and texture was improved by ∼40 % after annealing at 170$^{circ}C$. The stress in films was not reduced much after annealing below 170$^{circ}C$.
