- 산화주석을 기반으로 한 DMMP 후막가스센서 제작
- ㆍ 저자명
- 최낙진,반태현,곽준혁,백원우,김재창,허증수,이덕동
- ㆍ 간행물명
- 전기전자재료학회논문지
- ㆍ 권/호정보
- 2003년|16권 12호|pp.1217-1223 (7 pages)
- ㆍ 발행정보
- 한국전기전자재료학회
- ㆍ 파일정보
- 정기간행물| PDF텍스트
- ㆍ 주제분야
- 기타
Nerve gas sensor based on tin oxide was fabricated and its characteristics were examined. Target gas is dimethyl methyl phosphonate(C$_3$ $H_{9}$ $O_3$P, DMMP) that is simulant gas of nerve gas. Sensing materials were Sn $O_2$ added a-Al$_2$ $O_3$ with 0∼20wt.% and were physically mixed each material. They were deposited by screen printing method on alumina substrate. The sensor device was consisted of sensing electrode with interdigit(IDT) type in front and a heater in back side. Total size of device was 7${ imes}$10${ imes}$0.6㎣. Crystallite size & phase identification and morphology of fabricated Sn $O_2$ powders were analyzed by X-ray diffraction and by a scanning electron microscope, respectively. Fabricated sensor was measured as flow type and resistance change of sensing material was monitored as real time using LabVIEW program. The best sensitivity was 75% at adding 4wt.% $alpha$-Al$_2$ $O_3$, operating temperature 30$0^{circ}C$ to DMMP 0.5ppm. Response and recovery time were about 1 and 3min., respectively. Repetition measurement was very good with $pm$3% in full scale.TEX>$pm$</TEX>3% in full scale.