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Electrical Properties of Alcohol Vapor Sensors Based on Porous Silicon
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  • Electrical Properties of Alcohol Vapor Sensors Based on Porous Silicon
  • Electrical Properties of Alcohol Vapor Sensors Based on Porous Silicon
저자명
Park. Kwang-Youl,Kang. Kyung-Suk,Kim. Seong-Jeen,Lee. Sang-Hoon,Park. Bok-Gil,Sung. Man-Young
간행물명
전기전자재료학회논문지
권/호정보
2003년|16권 12호|pp.1232-1236 (5 pages)
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한국전기전자재료학회
파일정보
정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

In this work, we fabricated a gas-sensing device based on porous silicon(PS), and its C-V properties were investigated for sensing alcohol vapor. The structure of the sensor consists of thin Au/oxidized PS/PS/P-Si/Al, where the p-Si is etched anisotropically to be prepared into a membrane-shape. We used alcohol gases vaporized from different alcohol (or ethanol) solutions mixed with pure water at 36$^{circ}C$, similarly with an alcohol breath measurement to check drunk driving. As the result, I-V curves showed typical tunneling property, and C-V curves were shaped like those of a MIS (metal-insulator-semiconductor) capacitor, where the capacitance in accumulation was increased with alcohol vapor concentration.