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MOCVD로 제조한 SnO2 박막의 표면반응 특성
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  • MOCVD로 제조한 SnO2 박막의 표면반응 특성
저자명
박경희,서용진,홍광준,이우선,박진성,Park. Kyung-Hee,Seo. Yong-Jin,Hong. Kwang-Jun,Lee. Woo-Sun,Park. Jin-Seong
간행물명
한국재료학회지
권/호정보
2003년|13권 5호|pp.309-312 (4 pages)
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한국재료학회
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

Tin dioxide($_SnO2$) thin films were deposited on alumina substrate by metal-organic chemical vapor deposition (MOCVD) as a function of temperature and time. Thin films were fabricated from di-n-butyltin diacetate as a precursor and oxygen as an oxidation. The microstructure of deposited films was characterized by X-ray diffraction and field emission scanning electron microscopy(FE-SEM). The thickness was linearly increased with deposition time and $SnO_2$structure was found from $375^{circ}C$ for the deposition time of 32 min. The maximum sensitivity to 500ppm CO gas was observed for the specimens deposited at $375^{circ}C$ for 2 min at the operating temperature of $350^{circ}C$. Gas sensitivity to CO increased with decreasing the film thickness. The sensing properties of response time, recovery and sensitivity of CO were changed with variations of substrate temperature and time.