The presence of ultrasonic wave in the caustic etching process enhances the etching rate and results in finer and more homogeneous textured structure of the crystalline silicon surface. The silicon solar cell textured in the caustic solution at $60^{circ}C$ with ultrasonic wave gives higher cell performance than the cell textured at $70^{circ}C$ without ultrasonic wave. This result indicates a strong possibility of lowering the production cost of the silicon solar cell through saving the thermal budget or expensive chemical normally employed in the texturisation of the crystalline silicon.