VGF법을 사용하여 CuBr₂ dopant가 첨가된 Bi₂Te2.55Se0.45 열전재료를 제조하였다. 이 방법을 사용하여 일방향으로 성장된 Bi₂Te2.55Se0.45 잉곳의 제조가 가능하였으며 XRD 분석 결과 우선성장 방향이 (0 1 5)면임이 밝혀졌다. 본 실험을 통하여 제조한 열전재료의 Seebeck 계수와 전기전도도를 373∼523 K 범위에서 측정하였다.
The preparation of n-type thermoelectric material of Bi₂ Te2.55Se0.45 doped with CuBr₂ was carried out using a vertical gradient freezing method. With this method, unidirectional solidified Bi₂Te2.55Se0.45 has been obtained. XRD analysis demonstrated that Bi₂2.55Se0.45 5 ingot has grown with prefer orientation of (0 1 5) face. Seebeck coefficient and electrical conductivity were measured as functions of temperature in the range of 373 K to 523 K on the sample which prepared via VGF method.
