ITO_{(n)}/Si_{(p)}$ solar cell is fabricated by vaccum deposition method under the resistance heating with substrate temperature kept about 200[$^{circ}C$] and than their properties are investigated. The maximum output of fabricated solar cell is obtained when the composition of the thin film is consisted of indium oxide 91[mole %] and tin oxide 9(mole %). The solar cell electrical charateristics can be improved by annealing but are deteriorated at temperature above 600[$^{circ}C$] for longer than 15[min].