- 초음파분무법으로 제조한 α-Fe2O3 막의 구조적 및 전기적 특성에 미치는 기판온도 효과
- ㆍ 저자명
- 마대영,김정규,Ma. Tae-Young,Kim. Jeong-Gyoo
- ㆍ 간행물명
- 센서학회지
- ㆍ 권/호정보
- 2004년|13권 4호|pp.282-286 (5 pages)
- ㆍ 발행정보
- 한국센서학회
- ㆍ 파일정보
- 정기간행물| PDF텍스트
- ㆍ 주제분야
- 기타
${alpha}-Fe_{2}O_{3}$ films were prepared by ultrasonic spray pyrolysis (USP) on $SiO_{2}$ coated Si wafers using iron acetylacetonate as an iron precursor. The crystallographic properties and surface morphologies of the films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. X-ray photoelectron spectroscopy (XPS) was carried out to determine the Fe oxidation states. In order to observe stability of the films to temperature, the resistance variation of the films with an ambient temperature was measured. The effects of substrate temperature on the structural and electrical properties of the ${alpha}-Fe_{2}O_{3}$ films were studied. The films were densified from the substrate temperature of $350^{circ}C$. The grain size of the films grown at $400^{circ}C$ was shown to be increased abruptly comparing with that of $350^{circ}C$. The films showed a low resistance variation between the ambient temperature of $300^{circ}C$ and $350^{circ}C$.