This paper descibes on the characteristics of Ta-N(tantalum nitride) ceramic thin-film strain gauges which were deposited on Si substrates by DC reactive magnetron sputtering in an argon-nitrogen atmosphere (Ar-$(4{sim}16%)N_{2}$) for high-temperature applications. These films were annealed in $2{ imes}10^{-6}$ Torr vacuum furnace at the range of $500{sim}1000^{circ}C$. Optimum deposition atmosphere and annealing temperature were determined at $900^{circ}C$ for 1 hr. in 8% $N_{2}$ gas flow ratio. Under optimum formation conditions, the Ta-N thin-film for strain gauges was obtained a high-resistivity of $768.93{mu}{Omega}{cdot}cm$, a low temperature coefficient of resistance (TCR) of -84 ppm/$^{circ}C$ and a good longitudinal gauge factor (GF) of 4.12.