- 광반도체용 사파이어웨이퍼 기계연마특성 연구
- ㆍ 저자명
- 황성원,신귀수,김근주,서남섭
- ㆍ 간행물명
- 한국정밀공학회지
- ㆍ 권/호정보
- 2004년|21권 2호|pp.218-223 (6 pages)
- ㆍ 발행정보
- 한국정밀공학회
- ㆍ 파일정보
- 정기간행물| PDF텍스트
- ㆍ 주제분야
- 기타
The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by Micro-lapping process. The sapphire crystalline wafers were characterized by double crystal X-ray diffraction. The sample quality of crystalline sapphire wafer at surface has a full width at half maximum of 250 arcsec. This value at the surface sapphire wafer surfaces indicated 0.12${mu}m$ sizes. Surfaces of sapphire wafers were mechanically affected by residual stress and surface default. As a result, the value of surface roughness of sapphire wafers measured by AFM(Atom Force Microscope) was 2.1nm.