We investigated the effects of oxidizer additive on the performance of Cu-CMP process using commonly used tungsten slurry. In order to compare the removal rate and non-uniformity as a function of oxidizer contents, we used alumina-based tungsten slurry and copper blanket wafers deposited by DC sputtering method. According to the CMP removal rates and particle size distribution, and the microstructures of surface layer by SEM image as a function or oxidizer contents were greatly influenced by the slurry chemical composition of oxidizers. The difference in removal rate and roughness of copper surface are believed to cause by modification in the mechanical behavior of $Al_2$O$_3$abrasive particles in CMP slurry.