The selectable dual band LNA usually uses common source transistor pair each input of which is selectively driven at a different frequency in a series resonant form. This paper analyzes the degradation in noise figures of the MOSFET common source pair with series resonance when it is driven concurrently at both inputs with different frequencies as a concurrent dual band LNA. Results of analysis will be compared with the measured noise figures of CMOS LNA with double inputs fabricated in 0.18 $mu extrm{m}$ CMOS process. Additionally, analyzing the contributions of FET channel noise and source noise from the LNA operating in the other band, this paper proposes optimum matching topology which minimizes the added noises for concurrent operation.