Ta films were deposited on Si (100) substrates at zero substrate bias voltage and a substrate bias voltage of -125 V ($V_{s}$ = -125 V) using a non-mass separated ion beam deposition system. To investigate the effect of the negative substrate bias voltage on the impurity concentration in the Ta films, secondary ion mass spectrometry (SIMS) was used to determine impurities in the Ta films. By the SIMS depth profiles with $Cs^{+}$ cluster ion beam, high intensities of O, C and Si were clearly found in the Ta film at $V_{s}$ = 0 V, whereas these impurities remarkably decreased in the Ta film at $V_{s}$ = -125 V. Furthermore, from the SIMS result with $Cs^{+}$ and $O_2^{+}$ ion beams, it was found that applying the negative substrate bias voltage could affect individual impurity contents in the Ta films during the deposition. Discussions concerning the effect of the negative substrate bias voltage on the impurity concentration of Ta films will be described in details.