The Ni/SiC Schottky diode was fabricated with the $alpha$-SiC thin film grown by the ICP-CVD method on a (111) Si wafer. $alpha$-SiC film has been grown on a carbonized Si layer in which the Si surface was chemically converted to a very thin SiC layer achieved using an ICP-CVD method at $700^{circ}C$. To reduce defects between the Si and $alpha$-SiC, the surface of the Si wafer was slightly carbonized. The film characteristics of $alpha$-SiC were investigated by employing TEM (Transmission Electron Microscopy) and FT-IR (Fourier Transform Infrared Spectroscopy). Sputterd Ni thin film was used as the anode metal. The boundary status of the Ni/SiC contact was investigated by AES (Auger Electron Spectroscopy) as a function of the annealing temperature. It is shown that the ohmic contact could be acquired beyond a 100$0^{circ}C$ annealing temperature. The forward voltage drop at 100A/cm was I.0V. The breakdown voltage of the Ni/$alpha$-SiC Schottky diode was 545 V, which is five times larger than the ideal breakdown voltage of the silicon device. As well, the dependence of barrier height on temperature was observed. The barrier height from C- V characteristics was higher than those from I-V.