In order to improve c-axis crystalline orientation and high perpendicular coercivity of deposited ${Co}_77{Cr}_20{Ta}_3$perpendicualr recording layer, Two step method was investigated using a Facing Targets Sputtering System(FTS). The </TEX>${Delta heta}_50$</TEX> of ${Co}_77{Cr}_20{Ta}_3$recording layer deposited on seedlayer prepared at Room Temperature was as low as $5^circ$, while that of the recording layer without seedlayer was about 11$^{circ}$. The Two-Step method using ${Co}_77{Cr}_20{Ta}_3$seedlayer prepared at Room Temperature was shown to be very effective in controling the c-axis orientation of ${Co}_77{Cr}_20{Ta}_3$ recording layer with thin thickness.