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Effect of O2 Partial Pressure on AlOx Thin Films Prepared by Reactive Ion Beam Sputtering Deposition
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  • Effect of O2 Partial Pressure on AlOx Thin Films Prepared by Reactive Ion Beam Sputtering Deposition
  • Effect of O2 Partial Pressure on AlOx Thin Films Prepared by Reactive Ion Beam Sputtering Deposition
저자명
Seong. Jin-Wook,Yoon. Ki-Hyun,Kim. Ki-Hwan,Beag. Young-Whoan,Koh. Seok-Keun
간행물명
한국세라믹학회지
권/호정보
2004년|41권 5호|pp.364-369 (6 pages)
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한국세라믹학회
파일정보
정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

The barrier and optical properties of AlO$_{x}$ thin films on polycarbonate deposited by Reactive Ion Beam Sputtering (RIBS) were investigated at different oxygen partial pressure. We measured the deposition rate of AlO$_{x}$ thin films. As the oxygen partial pres-sure increased, the deposition rate increased then decreased. The changes of deposition rate are associated with the properties of deposited films. The properties of deposited AlO$_{x}$ thin films were studied using X-ray Photoelectron Spectroscopy (XPS), Scan-ning Electron Microscopy (SEM), and Atomic Force Microscopy (AFM). Optimum deposition parameters were found for fabricat-ing aluminum oxide thin films with high optical transparency for visible light and low Oxygen Transmission Rate (OTR). The optical transmittance of AlO$_{x}$ thin film deposited on polycarbonate (PC) showed the same value of bare PC.bare PC.