1-Hydroxy-4-(2-naphthalenesulfonyloxy) cyclohexane(1), 1,4-di-(2-naphthalenesulfonyloxy) cyclohexane(2), 1-hydroxy-4-(2-thiophenesulfonyloxy) cyclohexane(3), 1,4-di-(2-thiophenesulfonyloxy) cyclohexane(4) were synthesized and evaluated for their performance as novel acid amplifiers for 193 nm photoresists. These acid amplifiers(1-4) showed reasonable thermal stability at the usual resist-processing temperature, 9$0^{circ}C$-12$0^{circ}C$. And estimated by the sensitivity curve, (1)-(4) enhanced the sensitivity of poly(tert-butyl methacrylate) film by 1.2-1.4 times, compared to poly(tert-butyl methacrylate) film whithout acid amplifiers, in the presence of a photoacid generator.