Pulse modulation technique provide additional controling method for electron temperature and density in rf and microwave processing plasma. Transient characteristics of electron density and temperature have been measured in pulse modulated rf inductively coupled argon plasma using simple probe circuit. Electron temperature relaxation is clearly identified in the after glow stage. Controllability of average electron temperature and density depends on the modulation frequency and duty ratio. Numerical calculation of time-dependent electron density and temperature have been performed based on the global model. It has been shown that simple langmuir probe measurement method used for continuous plasma is also applicable to time-dependent measurement of pulse modulated plasma.