It is well-known that adjacent Pd-MILC enhanced the rate of Ni-MILC. And the phenomena can be explained by tensile stress propagation between amorphous silicon and Pd silicide which is catalyst of crystallization. In this study, we modified tensile stress by changing geometry of amorphous silicon to prove that there is a direct relation between tensile stress and Ni-MILC rate enhancement. When the tensile stress concentrated, the Ni-MILC rate was enhanced more(14.5 ${mu}m/hr$) by Pd-MILC while the conventional Pd-MILC enhanced Ni-MILC rate was 11 ${mu}m/hr$. As the result we can be sure that the tensile stress causes the enhancement of Ni-MILC rate.