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A 20-GHz Miniaturized Ring Hybrid Circuit Using TFMS on Low-Resistivity Silicon
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  • A 20-GHz Miniaturized Ring Hybrid Circuit Using TFMS on Low-Resistivity Silicon
  • A 20-GHz Miniaturized Ring Hybrid Circuit Using TFMS on Low-Resistivity Silicon
저자명
Lee. Sang-No,Lee. Joon-Ik,Yook. Jong-Gwan,Kim. Yong-Jun
간행물명
KIEE international transactions on electrophysics and applications
권/호정보
2005년|2호|pp.76-80 (5 pages)
발행정보
대한전기학회
파일정보
정기간행물|ENG|
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기타
이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

In this paper, a miniaturized ring hybrid circuit is characterized based on a thin film microstrip (TFMS) on low-resistivity silicon. In order to obtain low-loss characteristics, a polyimide layer with 50 $mu$m thickness is spin-coated onto the silicon to be used for the substrate. First, propagation characteristics of TFMS lines consisting of the ring hybrid circuit are presented. Then, a ring hybrid circuit based on TFMS is featured by employing the triple concentric circle approach for miniaturization. Triple concentric circle lines with $lambda$$_{g}$/4 or 3$lambda$$_{g}$/4 line lengths are implemented on the surface of the polyimide by circularly meandering to reduce the circuit size of the designed ring hybrid. Good agreement between measured and simulated results is obtained.