The spin transfer induced magnetization switching has been reported to occur in magnetic multilayer structures whose scope usually consists of one stack of ferromagnetic / non-ferromagnetic / ferromagnetic (F / N / F) materials. In this work, it is shown that: 1) Copper used as a buffer layer between the free Co and the Au cap-layer can clearly increase the probability to get the spin transfer induced magnetization switching in a simple spin valve Co 11 / Cu 6/ Co 2 (nm); 2) Furthermore, when Ruthenium is simultaneously applied as a buffer layer on the Si-substrate, the critical switching currents can be reduced by $30\%$, and the absolute resistance change delta R $[{Delta}R]$ of that stack can be enlarged by $35\%$. The enhancement of the spin transfer induced magnetization switching can be ascribed to a lower local stress in the thin Co layer caused by a better lattice match between Co and Cu and the smoothening effect of Ru on the thick Co layer.