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서지반출
Wafer Level Vacuum Packaged Out-of-Plane and In-Plane Differential Resonant Silicon Accelerometers for Navigational Applications
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  • Wafer Level Vacuum Packaged Out-of-Plane and In-Plane Differential Resonant Silicon Accelerometers for Navigational Applications
  • Wafer Level Vacuum Packaged Out-of-Plane and In-Plane Differential Resonant Silicon Accelerometers for Navigational Applications
저자명
Kim. Illh-Wan,Seok. Seon-Ho,Kim. Hyeon-Cheol,Kang. Moon-Koo,Chun. Kuk-Jin
간행물명
Journal of semiconductor technology and science
권/호정보
2005년|5권 1호|pp.58-66 (9 pages)
발행정보
대한전자공학회
파일정보
정기간행물|ENG|
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기타
이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

Inertial-grade vertical-type and lateral-type differential resonant accelerometers (DRXLs) are designed, fabricated using one process and tested for navigational applications. The accelerometers consist of an out-of-plane (for z-axis) accelerometer and in-plane (for x, y-axes) accelerometers. The sensing principle of the accelerometer is based on gap-sensitive electrostatic stiffness changing effect. It says that the natural frequency of the accelerometer can be changed according to an electrostatic force on the proof mass of the accelerometer. The out-of-plane resonant accelerometer shows bias stability of $2.5{mu}g$, sensitivity of 70 Hz/g and bandwidth of 100 Hz at resonant frequency of 12 kHz. The in-plane resonant accelerometer shows bias stability of $5.2{mu}g$, sensitivity of 128 Hz/g and bandwidth of 110 Hz at resonant frequency of 23.4 kHz. The measured performances of two accelerometers are suitable for an application of inertial navigation.