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Polishing Mechanism of TEOS-CMP with High-temperature Slurry by Surface Analysis
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  • Polishing Mechanism of TEOS-CMP with High-temperature Slurry by Surface Analysis
  • Polishing Mechanism of TEOS-CMP with High-temperature Slurry by Surface Analysis
저자명
Kim. Nam-Hoon,Seo. Yong-Jin,Ko. Pil-Ju,Lee. Woo-Sun
간행물명
Transactions on electrical and electronic materials
권/호정보
2005년|6권 4호|pp.164-168 (5 pages)
발행정보
한국전기전자재료학회
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정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

Effects of high-temperature slurry were investigated on the chemical mechanical polishing (CMP) performance of tetra-ethyl ortho-silicate (TEOS) film with silica and ceria slurries by the surface analysis of X-ray photoelectron spectroscopy (XPS). The pH showed a slight tendency to decrease with increasing slurry temperature, which means that the hydroxyl $(OH^-)$ groups increased in slurry as the slurry temperature increased and then they diffused into the TEOS film. The surface of TEOS film became hydro-carbonated by the diffused hydroxyl groups. The hydro-carbonated surface of TEOS film could be removed more easily. Consequently, the removal rate of TEOS film improved dramatically with increasing slurry temperature.