Highly conductive and transparent in the visible region tin-doped indium oxide(ITO) thin films were deposited on Corning glass by r.f sputtering. To achieve high transmittance and low resistivity, we examined various parameters such as r.f power and deposition time. The films crystallinity shifted from (222) to (400) and (440) orientation as deposition time and r.f power increased. Surface roughness RMS value increased proportionally with deposition time. The lowest resistivity was $5.36{ imes}10^{-4}{Omega}{cdot}cm$ at 750 nm thickness, $200^{circ}C$ substrate temperature and 125 w r.f power. All of the films showed over $85\%$ transmittance in the visible wavelength range.