In order to find a proper buffering material which can prohibit an unwanted interfacial reaction between anode and electrolyte of LSGM-based SOFC, we examined a gadolinium doped ceria and scandium doped zirconia as a candidate. For this examination, we investigated the microstructural and phase stability of the interface under different buffering layer conditions. According to the investigation, ceria based material induced a serious La diffusion out of the LSGM electrolyte resulted in the formation of very resistive $LaSrGa_3O_7$ phase at the interface. On the other hand zirconia based material was directly reacted with LSGM electrolyte and thus produced very resistive reaction products such as $La_2Zr_2O_7,;Sr_2ZrO_4,;LaSrGaO_4;and;LaSrGa_3O_7$. From this study we found that an improper buffering material induced the higher internal cell resistance rather than an interfacial stability.