Highly c-axis oriented Zinc oxide (ZnO) films were successfully deposited at room temperature by oxygen ion-assisted pulsed filtered vacuum arc. The effect of oxygen gas ratio ($O_{2}/O_{2}+Ar$ on the preferred orientation, surface morphology and resistivity of the ZnO films were investigated. Highly crystalline ZnO films with (002) orientation were obtained at over $13\%$ of oxygen gas ratio. Increasing oxygen gas ratio up to $80\%$ was found to improve crystallinity of the films. From hall measurements, it was found that the film has n-type characteristic and carrier concentration and its mobility were closely related with oxygen gas ratio. Minimal resistivity of $3.6{ imes}10^{-3}{Omega}{cdot}cm$ was obtained in the range of $20\%$ to $40\%$ of oxygen gas ratio.