We have investigated the optical properties of Erbium (Er)-implanted GaN by photoluminescence (PL). Various doses of Er ion were implanted on GaN epilayers by ion implantation. Visible green emission lines due to inner 4f shell transitions for $Er^{3+}$ were observed from the PL spectrum of Er-implanted GaN. The emission spectrum consists of two narrow green lines at 537 and 558 nm. The green emission lines are identified as $Er^{3+}$ transitions from the $^{5}H_{11/2}$ and $^{4}S_{3/2}$ levels to the $^{4}I_{15/2}$ ground state. The stronger peaks in the case with the dose of $5{ imes}10^{14}cm^{-2}$, together with the relatively higher intensity of the $Er^{3+}$ luminescence in the lower doped sample. It implies that some damage remains in the case with the dose of $1{ imes}10^{16}cm^{-2}$. The peak positions of emission lines due to inner 4f shell transitions for $Er^{3+}$ do not change with increasing temperature. It indicates that $Er^{3+}$ related emission depends very little on the ambient temperature.