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Analysis of the Influence of the Address Electrode Width on High-speed Addressing Using the Vt Close Curve and Dynamic Vdata Margin
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  • Analysis of the Influence of the Address Electrode Width on High-speed Addressing Using the Vt Close Curve and Dynamic Vdata Margin
  • Analysis of the Influence of the Address Electrode Width on High-speed Addressing Using the Vt Close Curve and Dynamic Vdata Margin
저자명
Kim. Yong-Duk,Park. Se-Kwang
간행물명
KIEE international transactions on electrophysics and applications
권/호정보
2005년|5호|pp.183-190 (8 pages)
발행정보
대한전기학회
파일정보
정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

In order to drive the high-density plasma displays, a high-speed driving technology must be researched. In this experiment, the relationship between the width of the address electrode and high-speed driving is analyzed using the Vt close curve and the panel structure for high-speed driving is proposed. In addition we show that the wider the width of the address electrode is, the narrower the width of the scan pulse becomes. Therefore, we could achieve the minimum data voltage of 50.1V at a scan pulse width of $1.0/{mu}s$ and a ramp voltage of 210V at an address electrode width of $180/{mu}m$ for the high-speed driving 4-inch test PDP.