The barrier characteristics of ZrN films deposited by remote plasma enhanced atomic layer deposition(PEALD) using TDEAZ and $N_2$ remote plasma have been investigated under various deposition conditions such as temperatures, plasma power and processing pressures. ZrN films showed generally improved properties as the processing temperature, pressure and plasma power increased. The optimized processing temperature, plasma power and pressure were $300^{circ}C$, 200 Watt and 1 torr. respectively ZrN films deposited at the optimized processing conditions showed the carbon contents and resistivity of $6at.\%$ and $400{mu}{Omega}cm$ respectively.