Chemical mechanical polishing is an essential process in the production of copper-based chips. On this work, the stability of hydrogen peroxide ($H_{2}O_{2}$) as an oxidizer of copper CMP slurry has been investigated. $H_{2}O_{2}$ is known as the most common oxidizer in copper CMP slurry. But $H_{2}O_{2}$ is so unstable that its stabilization is needed using as an oxidizer. As adding KOH as a pH buffering agent, stability of $H_{2}O_{2}$ decreased. However, $H_{2}O_{2}$ stability in slurry went up with putting in small amount of BTA as a film forming agent. There was no difference of $H_{2}O_{2}$ stability between pH buffering agents KOH and TMAH at similar pH value. Addition of $H_{2}O_{2}$ in slurry in advance of bead milling led to better stability than adding after bead milling. Adding phosphoric acid resulted in the higher stability. Using alumina C as an abrasive was good at stabilizing for $H_{2}O_{2}$.