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글래스 천이 공정에 의해 저온소결된 PZTN
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  • 글래스 천이 공정에 의해 저온소결된 PZTN
저자명
김찬영,Kim. Chan Young
간행물명
전기학회논문지. The transactions of the Korean Institute of Electrical Engineers. C/ C, 전기물성·응용부문
권/호정보
2005년|54권 3호|pp.97-102 (6 pages)
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대한전기학회
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정기간행물|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

This research was a fundamental study for the low temperature sintering of PZTN by glass phase transient processing. To lower the sintering temperature, the glass phase Processing was used. Also to improve the electrical properties, the transient processing was utilized. After characterization, the various analytic techniques, such as Archimedes method for the measuring densification, x-ray diffraction patterns for the quantitative analysis of crystalline phases were utilized. Also the dielectric constant, dissipation factor, and piezoelectric coefficients were measured to evaluate the PZTN sintered at the $950^{circ}C$ and $1050^{circ}C$. This was confirmed that the sintering temperature of PZTN was reduced by $950^{circ}C$ and the electrical properties were improved by the transition processing. Therefore, the glass phase transient processing can be applicable to low the sintering temperature with the dielectric and piezoelectric properties.