Physicochemical and electrical properties for hydrogen gas sensors based on Pd-deposited $WO_3$ thin films were investigated as a function of Pd thickness, annealing temperature, and operating temperature. $WO_3$ thin films were deposited on an insulating material by thermal evaporator. XRD, FE-SEM, AFM, and XPS were used to evaluate the crystal structure, microstructure, surface roughness, and chemical property, respectively. The deposited films were grown $WO_3$ polycrystalline with rhombohedral structure after annealing at $500^{circ}C$. The addition effect of Pd is not the crystallinity but the suppression of grain growth of $WO_3$. Pd was scattered an isolated small spherical grain on $WO_3$ thin film after annealing at $500^{circ}C$ and it was agglomerated as an irregular large grain or diffused into $WO_3$ after annealing at $600^{circ}C$. 2 nm Pd-deposited $WO_3$ thin films operated at $250^{circ}C$ showed good response and recovery property.