[ $Yb_2O_3$ ] films were successfully deposited on a cube-textured Ni and(100) $SrTiO_3$(STO) single crystal substrates by metal organic chemical vapor deposition(MOCVD) method using $H_2O$ vapor as an oxidant. $H_2O$ vapor was used in order to avoid the oxidation of Ni substrate. The working pressure and Ar flow rate were 10 Ton and 600 sccm, respectively. $Yb_2O_3$ films on STO were formed at high temperatures above $900^{circ}C$. While XRD peaks from $Yb_2O_3$ were hardly detected at $900^{circ}C$, the $Yb_2O_3$(400) texture was developed fur the films grown at deposition temperatures above $950^{circ}C$. The AEM surface roughness of $Yb_2O_3$ film, grown on STO, was in the range of $6{sim}10nm$ for the film deposited at $950^{circ}C$ with a $H_2O$ vapor partial pressure of 5.5 Ton and deposition times of 3 and 5 mins. For cube-textured Ni substrate, both $Yb_2O_3$(222) and $Yb_2O_3$ (400) textures were developed textures at deposition temperatures above $850^{circ}C$.