Al-doped ZnO (AZO) thin films were grown on type of glass#1737 substrates by DC magnetron sputtering. The structural, electrical and optical properties of the films were investigated as a function of various plasma discharge power. The obtained films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (002) crystallographic direction. The lowest resistivity was $6.0{ imes}10^{-4}{Omega}cm$ with the carrier concentration of $2.69{ imes}10^{20}cm^{-3}$ and Hall mobility of 20.43 $cm^2/Vs$. The average transmittance in the visible range was above 90%.