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Magnetic Tunnel Junctions with Magnesium Oxide Barriers
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  • Magnetic Tunnel Junctions with Magnesium Oxide Barriers
  • Magnetic Tunnel Junctions with Magnesium Oxide Barriers
저자명
Nagahama. Taro,Moodera. Jagadeesh S.
간행물명
Journal of magnetics
권/호정보
2006년|11권 4호|pp.170-181 (12 pages)
발행정보
한국자기학회
파일정보
정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
서지반출

기타언어초록

Spin dependent tunneling has enormously activated the field of magnetism in general, and in particular spin transport studies, in the past ten years. Thousands of articles related to the subject have appeared with many fundamental results. Importantly, there is great interest in their potential for application. There was another surge of activity in this field since the past five years - created by the theoretical prediction of a large tunnel magnetoresistance that arises due to band symmetry matched coherent tunneling in epitaxial magnetic tunnel junctions with (001) MgO barrier and experimentally well demonstrated. This further development in the field has boosted the excitement in both fundamental science as well as the possibility of application in such as magnetic random access memory, ultra sensitive read heads, biosensors and spin torque diodes. This review is a brief coverage of the field highlighting the literature that deals with magnetic tunnel junctions having epitaxial MgO tunnel barriers.