Precision thin film resistors using evanohm R alloy were fabricated by do magnetron sputtering method. The physical and electrical properties of the resistors were studied after treatment of thermal annealing. The crystallization of the film was increased as the annealing temperature increase. Diffusion and oxidation of Cr and Al elements were occurred into the film surface. The minimum TCR values of 10.46 ppm/$^{circ}C$ and 10.65 ppm/$^{circ}C$ were measured at the annealing temperatures of $200^{circ}C$ and $300^{circ}C$, respectively. We are conducting additional studies to improve characteristics of our resistors for practical device application.