Recently half-metallic full-Heusler alloy films have attracted significant interests for spintronics devices. As these alloys have been known to have a high spin polarization, very large TMR ratio is expected in magnetic tunnel junctions. Among these alloys, $Co_2MnSi$ full-Heusler alloy with a high spin polarization and a high Curie temperature is considered a good candidate as an electrode material for spintronic devices. In this study, the magnetic and structural properties of $Co_2MnSi$ Heusler alloy films were investigated. TMR characteristics of magnetic tunnel junctions with a $Co_2MnSi/SiO_2/CoFe$ structure were studied. A maximum MR ratio of 39% with $SiO_2$ substrates and 27% with MgO(100) substrates were obtained. The lower MR ratio than expectation is considered due to off-stoichiometry and atomic disorder of $Co_2MnSi$ electrode together with oxidation of the electrode layer.