In this paper, we report the changes of morphology, transmittance and photoluminescence (PL) in hydrogenated amorphous $As_{40}Ge_{10}Se_{15}S_{35}$ thin films, thermally deposited at the vapor incidence angles (${ heta}$) of $0^{circ},;45^{circ};and;80^{circ}$. The hydrogenation was carried out under the condition of a $H_2$ pressure ($P_H$) of 20 atm and an annealing temperature range, $T_{Anneal}$ of $150^{circ}C{sim}210^{circ}C$. A columnar structures with an inclination angle of approximately $65{sim}70^{circ}$ was formed in $80^{circ}$-deposited films and then the columnar was broken after hydrogenation. Transmittance increases with an increase of deposition angle and by the hydrogenation. In particular, a broad PL band on the extended region is observed in obliquely deposited films and it increases during the hydrogenation.