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A study on the characteristics of SrS:Cu TFEL devices prepared by hot wall deposition
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  • A study on the characteristics of SrS:Cu TFEL devices prepared by hot wall deposition
  • A study on the characteristics of SrS:Cu TFEL devices prepared by hot wall deposition
저자명
Lee. Sang-Tae
간행물명
한국마린엔지니어링학회지
권/호정보
2006년|30권 4호|pp.514-519 (6 pages)
발행정보
한국마린엔지니어링학회
파일정보
정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

SrS:Cu, Cl thin films have been grown by the hot wall technique with S furnace placed on the outside of the growth chamber in order to investigate the crystallographic and optical characteristics. The films have a good crystallinity independent of CuCl wall temperature and PL characteristics showed a peak assigned by the transition form $3d^94s^1;(^3Eg)$ to $3d^{10};(^1A_{1g})$ of $Cu^+$ center. It has also been found that. from the PLE spectra, $Cu^+$ luminescent centers are doped in the host materials. The EL emission from SrS:Cu-based device showed a greenish-blue but shifted to short wavelength compared to SrS:Ce-based EL. The device was obtained the maximum luminance of $110cd/m^2$ and the maximum luminous efficiency of $0.1;lm/W$ at $V_{40}$.