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Electrical and Dielectric Properties of MgO Thin Films Prepared through Electron-Beam Deposition
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  • Electrical and Dielectric Properties of MgO Thin Films Prepared through Electron-Beam Deposition
  • Electrical and Dielectric Properties of MgO Thin Films Prepared through Electron-Beam Deposition
저자명
You. Yil-Hwan,Kim. Jung-Seok,Hwang. Jin-Ha
간행물명
반도체및디스플레이장비학회지
권/호정보
2006년|5권 1호|pp.51-55 (5 pages)
발행정보
한국반도체및디스플레이장비학회
파일정보
정기간행물|ENG|
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기타
이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
서지반출

기타언어초록

MgO thin films were prepared through electron-beam deposition onto ITO-coated glass substrates in order to measure electrical, dielectric, and microstructural properties. Design of experiments was performed in this study with the aim to understanding of the effects of processing variables, e.g., substrate temperature and filament current of an e-beam evaporator statistically. Leakage currents, relative dielectric constants, and diffraction intensities of MgO thin films were analyzed statistically, following the analysis procedure provided in the design of experiments. The leakage current level of MgO thin films has been found to be statistically significant at the level of $alpha=0.1$.